Some evidences of ordering in InGaP layers grown by liquid phase epitaxy
Identifieur interne : 00CB78 ( Main/Repository ); précédent : 00CB77; suivant : 00CB79Some evidences of ordering in InGaP layers grown by liquid phase epitaxy
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Abstract
We make a comparative study of the optical and structural characteristics of two InxGa1-xP (x 0.5) films nearly lattice matched to GaAs, here referred to as sample S1 and sample S2. The films were grown by liquid phase epitaxy (LPE). Photoluminescence (PL) measurements were performed in a wide temperature and exciting power density range for different polarizations (parallel to the [0 1 1] and [0 1 1] directions) of the emitted radiation. Observations suggest that the InxGa1-xP layer layer in one of the samples has the usual characteristics commonly obtained in an LPE grown material, while in the other sample, an anomalous growth took place. Our experimental observations show differences in the layer thickness, the surface morphology, as well as in the structural and optical characteristics such as the 4 K PL energy peak position.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Some evidences of ordering in InGaP layers grown by liquid phase epitaxy</title><author><name sortKey="Prutskij, T A" uniqKey="Prutskij T">T. A. Prutskij</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Instituto de Ciencias, BUAP, Apdo, Postal 207</s1><s2>72000 Puebla, Pue.</s2><s3>MEX</s3><sZ>1 aut.</sZ></inist:fA14><country>Mexique</country><wicri:noRegion>72000 Puebla, Pue.</wicri:noRegion></affiliation></author><author><name sortKey="Diaz Arencibia, P" uniqKey="Diaz Arencibia P">P. Diaz-Arencibia</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Departamento de Fisica, CINVESTAV, Apdo, Postal 14-740</s1><s2>7000, México D.F.</s2><s3>MEX</s3><sZ>2 aut.</sZ></inist:fA14><country>Mexique</country><wicri:noRegion>7000, México D.F.</wicri:noRegion></affiliation></author><author><name sortKey="Mintairov, A" uniqKey="Mintairov A">A. Mintairov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electrical Engineering, University of Notre Dame, 275 Fitzpatrick Hall</s1><s2>IN 46556</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Indiana</region></placeName></affiliation></author><author><name sortKey="Merz, J" uniqKey="Merz J">J. Merz</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electrical Engineering, University of Notre Dame, 275 Fitzpatrick Hall</s1><s2>IN 46556</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Indiana</region></placeName></affiliation></author><author><name sortKey="Kosel, T" uniqKey="Kosel T">T. Kosel</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electrical Engineering, University of Notre Dame, 275 Fitzpatrick Hall</s1><s2>IN 46556</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Indiana</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0384868</idno><date when="2003">2003</date><idno type="stanalyst">PASCAL 03-0384868 INIST</idno><idno type="RBID">Pascal:03-0384868</idno><idno type="wicri:Area/Main/Corpus">00CA49</idno><idno type="wicri:Area/Main/Repository">00CB78</idno></publicationStmt><seriesStmt><idno type="ISSN">0169-4332</idno><title level="j" type="abbreviated">Appl. surf. sci.</title><title level="j" type="main">Applied surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anomaly</term><term>Comparative study</term><term>Film growth</term><term>Gallium phosphides</term><term>III-V semiconductors</term><term>Indium phosphides</term><term>LPE</term><term>Photoluminescence</term><term>Surface structure</term><term>Ternary compounds</term><term>Thickness</term><term>Transmission electron microscopy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Semiconducteur III-V</term><term>Croissance film</term><term>Epitaxie phase liquide</term><term>Photoluminescence</term><term>Anomalie</term><term>Epaisseur</term><term>Structure surface</term><term>Microscopie électronique transmission</term><term>Etude comparative</term><term>Gallium phosphure</term><term>Indium phosphure</term><term>Composé ternaire</term><term>Ga In P</term><term>InGaP</term><term>InxGa1-xP</term><term>6855J</term><term>7855C</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We make a comparative study of the optical and structural characteristics of two In<sub>x</sub>Ga<sub>1-x</sub>P (x 0.5) films nearly lattice matched to GaAs, here referred to as sample S1 and sample S2. The films were grown by liquid phase epitaxy (LPE). Photoluminescence (PL) measurements were performed in a wide temperature and exciting power density range for different polarizations (parallel to the [0 1 1] and [0 1 1] directions) of the emitted radiation. Observations suggest that the In<sub>x</sub>Ga<sub>1-x</sub>P layer layer in one of the samples has the usual characteristics commonly obtained in an LPE grown material, while in the other sample, an anomalous growth took place. Our experimental observations show differences in the layer thickness, the surface morphology, as well as in the structural and optical characteristics such as the 4 K PL energy peak position.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>212-13</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Some evidences of ordering in InGaP layers grown by liquid phase epitaxy</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>11th International Conference on Solid Films and Surfaces, Marseille, France, July 8-12, 2002 (ICSFS-11)</s1></fA09><fA11 i1="01" i2="1"><s1>PRUTSKIJ (T. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>DIAZ-ARENCIBIA (P.)</s1></fA11><fA11 i1="03" i2="1"><s1>MINTAIROV (A.)</s1></fA11><fA11 i1="04" i2="1"><s1>MERZ (J.)</s1></fA11><fA11 i1="05" i2="1"><s1>KOSEL (T.)</s1></fA11><fA12 i1="01" i2="1"><s1>AUFRAY (B.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>BERNARDINI (J.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>DALLAPORTA (H.)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>LE LAY (G.)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>SOUKIASSIAN (P.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Instituto de Ciencias, BUAP, Apdo, Postal 207</s1><s2>72000 Puebla, Pue.</s2><s3>MEX</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Departamento de Fisica, CINVESTAV, Apdo, Postal 14-740</s1><s2>7000, México D.F.</s2><s3>MEX</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Electrical Engineering, University of Notre Dame, 275 Fitzpatrick Hall</s1><s2>IN 46556</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA15 i1="01"><s1>CRMC2-CNRS, Université d'Aix-Marseille, Campus de Luminy, Case 913</s1><s2>13288 Marseille</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>Université de Provence</s1><s2>Marseille</s2><s3>FRA</s3><s9>patr.</s9></fA18><fA18 i1="02" i2="1"><s1>Centre de Recherches sur les Mécanismes de la Croissance Cristalline</s1><s2>Marseille</s2><s3>FRA</s3><s9>patr.</s9></fA18><fA18 i1="03" i2="1"><s1>Groupe de Physique de l'Etat Condensé</s1><s2>Marseille</s2><s3>FRA</s3><s9>patr.</s9></fA18><fA18 i1="04" i2="1"><s1>Laboratoire de Physique des Interactions Ioniques et moléculaires</s1><s2>Marseille</s2><s3>FRA</s3><s9>patr.</s9></fA18><fA18 i1="05" i2="1"><s1>Laboratoire de Matériaux et Microélectroniques de Provence</s1><s2>Marseille</s2><s3>FRA</s3><s9>patr.</s9></fA18><fA18 i1="06" i2="1"><s1>Commissariat à l'Energie Atomique. Service de Physique et Chimie des Surfaces et Interfaces</s1><s2>Saclay</s2><s3>FRA</s3><s9>patr.</s9></fA18><fA20><s1>230-234</s1></fA20><fA21><s1>2003</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16002</s2><s5>354000111240630430</s5></fA43><fA44><s0>0000</s0><s1>© 2003 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>5 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>03-0384868</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We make a comparative study of the optical and structural characteristics of two In<sub>x</sub>Ga<sub>1-x</sub>P (x 0.5) films nearly lattice matched to GaAs, here referred to as sample S1 and sample S2. The films were grown by liquid phase epitaxy (LPE). Photoluminescence (PL) measurements were performed in a wide temperature and exciting power density range for different polarizations (parallel to the [0 1 1] and [0 1 1] directions) of the emitted radiation. Observations suggest that the In<sub>x</sub>Ga<sub>1-x</sub>P layer layer in one of the samples has the usual characteristics commonly obtained in an LPE grown material, while in the other sample, an anomalous growth took place. Our experimental observations show differences in the layer thickness, the surface morphology, as well as in the structural and optical characteristics such as the 4 K PL energy peak position.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H55C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Croissance film</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Film growth</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Epitaxie phase liquide</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>LPE</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Anomalie</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Anomaly</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Anomalía</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Epaisseur</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Thickness</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Structure surface</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Surface structure</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0><s5>10</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Transmission electron microscopy</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Etude comparative</s0><s5>13</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Comparative study</s0><s5>13</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Estudio comparativo</s0><s5>13</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Gallium phosphure</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Gallium phosphides</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Indium phosphure</s0><s2>NK</s2><s5>20</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium phosphides</s0><s2>NK</s2><s5>20</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>21</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>21</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Ga In P</s0><s4>INC</s4><s5>32</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>InGaP</s0><s4>INC</s4><s5>33</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>InxGa1-xP</s0><s4>INC</s4><s5>34</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>6855J</s0><s2>PAC</s2><s4>INC</s4><s5>92</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4><s5>93</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s4>INC</s4><s5>62</s5></fC07><fN21><s1>272</s1></fN21><fN82><s1>PSI</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>ICSFS-11 International Conference on Solid Films and Surfaces</s1><s2>11</s2><s3>Marseille FRA</s3><s4>2002-07-08</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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